Ultrafast laser-induced phase transitions in amorphous GeSb films.

Dynamics of Ultrafast Phase Changes in Amorphous GeSb Films

The existence of nonthermal, ultrafast phase transitions after strong femtosecond laser excitation has been demonstrated in several materials such as silicon [1–3], gallium arsenide [3–6], indium antimonide [7], and carbon [8]. It is accepted that such transitions are induced by a softening of the lattice structure due to the generation of a very high density electron-hole plasma, as first prop...

Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation.

The study of the interaction of ultrashort laser pulses with solids has raised some important questions concerning the nature of the transformations occurring at the material surface in the presence of very strong levels of electronic excitation. The existence of electronic excitation induced phase transitions has been already demonstrated in several materials (Si [1], GaAs [2–4], graphite [5])...

Coherent optical phonons in different phases of Ge2Sb2Te5 upon strong laser excitation

The transient reflectivity response of phase-change Ge2Sb2Te5 films to intense femtosecond laser pulses is studied by ultrafast coherent phonon spectroscopy. The three different phases amorphous, fcc-, and hcp-crystalline , as well as laser-crystallized films, are investigated, featuring different photoexcited carrier and coherent optical phonon dynamics. At least two main phonon frequencies ar...

The influence of wavelength on phase transformations induced by picosecond and femtosecond laser pulses in GeSb thin films

Dynamics of ultrafast reversible phase transitions in GeSb films triggered by picosecond laser pulses

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